
2000 May 19
34
Philips Semiconductors
Product specication
One-chip telephone ICs with speech,
dialler and ringer functions
UBA2050(A); UBA2051(A;C)
IDD
available supply current for
peripherals in on-line mode
Iline ≥ 11 mA;
DTMF generator on;
no AC signal on the line
1.9
mA
Iline ≥ 11 mA;
DTMF generator off;
no AC signal on the line
2.6
mA
IDD(MR)
memory retention current
(internal consumption
on VDD)
Iline = 0 mA;
VCC discharging;
VDD = 1.2 V
300
nA
VDD(MR)
memory retention voltage
1.0
3.6
V
VDD(POR)
Power-on reset trip level
note 1
1.3
1.65
2.0
V
Transmit stages
MICROPHONE AMPLIFIER (PINS MIC+ AND MIC
AND LN)
Zi
input impedance
differential between
pins MIC+ and MIC
68
k
single-ended between
pin MIC+ or MIC
and GND
34
k
Gv(TX)
voltage gain from pins
MIC+ or MIC
to LN
VMIC = 4 mV (RMS)
43.2
44.2
45.2
dB
G
v(TX)
voltage gain reduction of
microphone amplier
internal MUTE active
80
dB
G
v(TX)(f)
voltage gain variation with
frequency
f = 300 to 3400 Hz;
referenced to f = 1 kHz
±0.2
dB
G
v(TX)(T)
voltage gain variation with
temperature
Tamb = 25 to +75 °C;
referenced to Tamb =25 °C
±0.3
dB
CMRR
common mode rejection ratio
80
dB
VLN(max)(rms) maximum sending signal
voltage level (RMS value)
Iline = 15 mA; THD = 2%
1.8
2.15
V
Iline = 4 mA; THD = 10%
0.35
V
Vn(LN)
noise output voltage at pin LN psophometrically weighted
(P53 curve); pins MIC+
and MIC
shorted through
200
78
dBmp
DTMF AMPLIFIER (PIN DTMF)
Z
i
input impedance
21
k
Gv(DTMF)
voltage gain from pin
DTMF to pin LN
in tone dialling mode;
VDTMF = 20 mV (RMS)
26
dB
G
v(DTMF)
voltage gain reduction of
DTMF amplier
internal MUTE inactive
80
dB
G
v(DTMF)(f)
voltage gain variation with
frequency
f = 300 to 3400 Hz;
referenced to f = 1 kHz
±0.2
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT