
2000 May 19
35
Philips Semiconductors
Product specication
One-chip telephone ICs with speech,
dialler and ringer functions
UBA2050(A); UBA2051(A;C)
Gv(DTMF)(T) voltage gain variation with
temperature
Tamb = 25 to +75 °C;
referenced to Tamb =25 °C
±0.4
dB
Gv(ct)
voltage gain from pin DTMF
to pin RX (condence tone)
in tone dialling mode;
VDTMF = 20 mV (RMS);
RL2 =10k;
9.2
dB
Receive stages
RECEIVE AMPLIFIER (PINS IR AND RX)
Zi
input impedance
21.5
k
Gv(RX)
voltage gain from
pin IR to pin RX
VIR = 4 mV (RMS)
32.4
33.4
34.4
dB
G
v(RX)
voltage gain reduction of
receive amplier
internal MUTE active
80
dB
Gv(RX)(f)
voltage gain variation with
frequency
f = 300 to 3400 Hz;
referenced to f = 1 kHz
±0.2
dB
Gv(RX)(T)
voltage gain variation with
temperature
Tamb = 25 to +75 °C;
referenced to Tamb =25 °C
±0.3
dB
Io(RX)(max)
maximum source and sink
current on pin RX
(peak value)
IP = 0 mA; sine wave drive
50
A
VRX(max)(rms) maximum receiving signal on
pin RX (RMS value)
IP = 0 mA; sine wave drive;
without RL2; THD = 2%
0.4
V
Vn(RX)(rms)
noise output voltage at pin RX
(RMS value)
pin IR open-circuit;
RL2 =10k;
psophometrically weighted
(P53 curve)
86
dBVp
EARPIECE AMPLIFIER (PINS GAR AND QR)
Gv(QR)
voltage gain from pin RX to
pin QR
VIR = 4 mV (RMS);
RE1 =RGAR = 100 k
0
dB
Gv(QR)
voltage gain setting range
RE1 = 100 k14
+12
dB
VQR(max)(rms) maximum receiving signal on
pin QR (RMS value)
IP = 0 mA; sine wave drive;
RL1 = 150 ; THD = 2%
0.3
0.38
V
IP = 0 mA; sine wave drive;
RL1 = 450 ; THD = 2%
0.46
0.56
V
Vn(QR)(rms)
noise output voltage at
pin QR (RMS value)
IR open-circuit;
RL1 = 150 ;
RE1 =RGAR = 100 k;
psophometrically weighted
(P53 curve)
86
dBVp
RE1 = 100 k;
RGAR =25k
98
dBVp
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT