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參數資料
| 型號： | 935260092118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 通信及網絡 |
| 英文描述： | SPECIALTY TELECOM CIRCUIT, PDSO14 |
| 封裝： | SOP-14 |
| 文件頁數： | 9/13頁 |
| 文件大?。?/td> | 475K |
| 代理商： | 935260092118 |
Philips Semiconductors
BUK9226-75A
TrenchMOS logic level FET
Product specication
Rev. 01 — 10 October 2000
5 of 13
9397 750 07585
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C75
V
Tj = 55 °C70
V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS =VGS; Figure 9
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
V
Tj = 55 °C
2.3
V
IDSS
drain-source leakage current
VDS =55V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
2
100
nA
RDSon
drain-source on-state resistance
VGS =5V; ID =25A; Figure 7 and 8
Tj =25 °C
22.1
26
m
Tj = 175 °C
54.6
m
VGS = 4.5 V; ID = 25 A; Tj =25 °C
29
m
VGS = 10 V; ID = 25 A; Tj =25 °C
20.9
24.6
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS = 25 V; f = 1 MHz; Figure 12
2340 3120 pF
Coss
output capacitance
319
383
pF
Crss
reverse transfer capacitance
215
295
pF
td(on)
turn-on delay time
VDD =30V; RL = 1.2 ;VGS =5V;RG =10 ;
24
ns
tr
rise time
141
ns
td(off)
turn-off delay time
142
ns
tf
fall time
108
ns
Ld
internal drain inductance
measured from drain lead from package to
centre of die
2.5
nH
Ls
internal source inductance
measured from source lead from package to
source bond pad
7.5
nH
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