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參數(shù)資料
| 型號(hào)： | 935260061118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | SPECIALTY TELECOM CIRCUIT, XMA |
| 封裝： | 11.75 X 7.55 MM, 0.45 MM HEIGHT, MODULE |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 156K |
| 代理商： | 935260061118 |
Specifications of the HT1 MOA3 S30
Rev. 1.1
1997-08-19
Ht1moa3.doc/HS
Page 6 of 24
2.6 Electrical Specifications
Symbol
min
typ
max
Comment / Conditions
Absolute Maximum Ratings
Junction Temperature
TJ
-55°C
140°C
Input Peak Current
I
INpeak
30 mA
Latch up Current
100 mA
MIL-STD 883D, Method 3023
ESD
2 kV
MIL-STD 883D, Method 3015.7,
Human Body
Operating Range
Temperature
T
A
-40°C
85°C
RThJunctionAmbient
≤ 30 K/W @
IINpeak = 30 mA
Input Threshold Voltage
1) 3)
VIN,TH
3,1 Vp
4,2 Vp
start modulation after SETCC
Input Read Voltage
1) 3)
VIN,RD
3,5 Vp
4,5 Vp
read EPROM
Input Write Voltage
1) 3)
VIN,WR
3,7 Vp
4,7 Vp
write EPROM
Demodulator
Range
3)
VDEM_R
2,0 Vp
4,0 Vp
VINHigh - VINLow @ VINHigh = 5,0 Vp
T0=8 s, TMOD=6*T0
2)
Modulator
R_MOD linear
3)
RMODL
4,5 k
V
INLow
≤ 2,0 V
p
R_MOD nonlinear
3)
RMODNL
3,6 k
V
INLow
≥ 2,0 V
p
Resonance Capacitor
3)
CResInit
189 pF
210 pF
231 pF
VIN = 4,0 Vp
EEPROM
Write Current
4)
IW
25 A
VDD = 2,8 V
Read Current
4)
IR
9 A
VDD = 2,8 V
Data Retention
Years
10
@ 55°C
Write Endurance
Cycles
100.000
1)
V
IN
= V
IN1
V
IN2
... voltage between connection pads
2)
VINHigh
input voltage before modulation
VINLow
input voltage during modulation
TMOD
duration of the modulation
3)
@ Ri = 10 k
resistance of measurement equipment
4)
tested on silicon level
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