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參數(shù)資料
| 型號： | 935245770165 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 多路復(fù)用及模擬開關(guān) |
| 英文描述： | 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO5 |
| 封裝： | PLASTIC, SC-88A, 5 PIN |
| 文件頁數(shù)： | 12/20頁 |
| 文件大?。?/td> | 102K |
| 代理商： | 935245770165 |
2002 May 15
2
Philips Semiconductors
Product specication
Bilateral switch
74HC1G66; 74HCT1G66
FEATURES
Wide operating voltage range from 2.0 to 9.0 V
Very low ON-resistance:
–45
(typical) at VCC = 4.5 V
–30
(typical) at VCC = 6.0 V
–25
(typical) at VCC = 9.0 V.
High noise immunity
Low power dissipation
Very small 5 pins package
Output capability: non standard.
DESCRIPTION
The 74HC1G/HCT1G66 is a high-speed Si-gate CMOS
device.
The 74HC1G/HCT1G66 provides an analog switch. The
switch has two input/output pins (Y and Z) and an active
HIGH enable input pin (E). When pin E is LOW, the analog
switch is turned off.
The non standard output currents are equal compared to
the 74HC/HCT4066.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25 °C; tr =tf = 6.0 ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PD in W).
PD =CPD × VCC2 × fi + ∑ ((CL +CS)× VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
CS = maximum switch capacitance in pF;
VCC = supply voltage in Volts;
∑ ((CL +CS)× VCC2 × fo) = sum of outputs.
2. For HC1G the condition is VI = GND to VCC.
For HCT1G the condition is VI = GND to VCC 1.5 V.
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
HC1G
HCT1G
tPZH/tPZL
turn-on time E to Vos
CL = 15 pF; RL =1k; VCC = 5 V 11
12
ns
tPHZ/tPLZ
turn-off time E to Vos
CL = 15 pF; RL =1k; VCC = 5 V 11
12
ns
CI
input capacitance
1.5
pF
CPD
power dissipation capacitance
notes 1 and 2
9
pF
CS
maximum switch capacitance
8
pF
INPUT E
SWITCH
L
OFF
HON
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