參數(shù)資料
型號： 935170150112
廠商： NXP SEMICONDUCTORS
元件分類： 門電路
英文描述： LV/LV-A/LVX/H SERIES, HEX 1-INPUT INVERT GATE, PDSO14
封裝： 5.30 MM, PLASTIC, SOT-337-1, SSOP-14
文件頁數(shù)： 9/14頁
文件大?。?/td> 154K
代理商： 935170150112
Philips Semiconductors
Product specification
74LVU04
Hex inverter
2001 Jan 11
4
ABSOLUTE MAXIMUM RATINGS1, 2
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VCC
DC supply voltage
–0.5 to +7.0
V
±IIK
DC input diode current
VI < –0.5 or VI > VCC + 0.5 V
20
mA
±IOK
DC output diode current
VO < –0.5 or VO > VCC + 0.5 V
50
mA
±IO
DC output source or sink current
– standard outputs
–0.5 V < VO < VCC + 0.5 V
25
mA
±IGND,
±ICC
DC VCC or GND current for types with
– standard outputs
50
mA
Tstg
Storage temperature range
–65 to +150
°C
PTOT
Power dissipation per package
– plastic DIL
– plastic mini-pack (SO)
– plastic shrink mini-pack (SSOP and TSSOP)
for temperature range: –40 to +125
°C
above +70
°C derate linearly with 12 mW/K
above +70
°C derate linearly with 8 mW/K
above +60
°C derate linearly with 5.5 mW/K
750
500
400
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
–40 to +85
°C
–40 to +125
°C
UNIT
MIN
TYP1
MAX
MIN
MAX
VCC = 1.2 V
1.0
VIH
HIGH level Input
VCC = 2.0 V
1.6
V
VIH
voltage
VCC = 2.7 to 3.6 V
2.4
V
VCC = 4.5 to 5.5 V
0.8*VCC
VCC = 1.2 V
0.2
VIL
LOW level Input
VCC = 2.0 V
0.4
V
VIL
voltage
VCC = 2.7 to 3.6 V
0.5
V
VCC = 4.5 to 5.5 V
0.2*VCC
VCC = 1.2 V; VI = VIH or VIL; –IO = 100 A
1.2
HIGH level output
VCC = 2.0 V; VI = VIH or VIL; –IO = 100 A
1.8
2.0
1.8
VOH
HIGH level output
voltage
VCC = 2.7 V; VI = VIH or VIL; –IO = 100 A
2.5
2.7
2.5
V
voltage
VCC = 3.0 V; VI = VIH or VIL; –IO = 100 A
2.8
3.0
2.8
VCC = 4.5 V; VI = VIH or VIL; –IO = 100 A
4.3
4.5
4.3
VOH
HIGH level output
VCC = 3.0 V; VI = VIH or VIL; –IO = 6 mA
2.40
2.82
2.20
V
VOH
voltage
VCC = 4.5 V; VI = VIH or VIL; –IO = 12 mA
3.60
4.20
3.50
V
VCC = 1.2 V; VI = VIH or VIL; IO = 100 A
0
LOW level output
VCC = 2.0 V; VI = VIH or VIL; IO = 100 A
0
0.2
VOL
LOW level output
voltage
VCC = 2.7 V; VI = VIH or VIL; IO = 100 A
0
0.2
V
voltage
VCC = 3.0 V; VI = VIH or VIL; IO = 100 A
0
0.2
VCC = 4.5 V; VI = VIH or VIL; IO = 100 A
0
0.2
VOL
LOW level output
VCC = 3.0 V; VI = VIH or VIL; IO = 6 mA
0.25
0.40
0.50
V
VOL
voltage
VCC = 4.5 V; VI = VIH or VIL; IO = 12 mA
0.35
0.55
0.65
V
±II
Input leakage
current
VCC = 5.5 V; VI = VCC or GND
1.0
A
ICC
Quiescent supply
current
VCC = 5.5 V; VI = VCC or GND; IO = 0
20.0
40.0
A
NOTE:
1. All typical values are measured at Tamb = 25 °C.
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