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參數(shù)資料
| 型號： | 934057051115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT6, SC-88, 6 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 52K |
| 代理商： | 934057051115 |
2002 Apr 09
4
Philips Semiconductors
Product specication
NPN resistor-equipped transistor;
PNP general purpose transistor
PUMF11
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
TR1 (NPN)
ICBO
collector-base cut-off current
VCB =50V; IE =0
100
nA
ICEO
collector-emitter cut-off current
VCE =30V; IB =0
1
A
VCE =30V; IB = 0; Tj = 150 °C
50
A
IEBO
emitter-base cut-off current
VEB =5V; IC =0
0.12
mA
hFE
DC current gain
VCE =5V; IC = 5 mA
80
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
150
mV
Vi(off)
input off voltage
VCE =5V; IC = 100 A
0.9
0.5
V
Vi(on)
input on voltage
VCE = 0.3 V; IC = 2 mA
2
1.1
V
R1
input resistor
15.4
22
28.6
k
resistor ratio
1.7
2.1
2.6
Cc
collector capacitance
VCB =10V; IE =ie = 0; f = 1 MHz
2.5
pF
TR2 (PNP)
ICBO
collector-base cut-off current
VCB = 30 V; IE =0
100 nA
ICEO
collector-emitter cut-off current
VCB = 30 V; IB = 0; Tj = 150 °C
10
A
IEBO
emitter-base cut-off current
VEB = 4 V; IC =0
100 nA
hFE
DC current gain
VCE = 6 V; IC = 1 mA
120
VCEsat
saturation voltage
IC = 50 mA; IB = 5 mA; note 1
200 mV
Cc
collector capacitance
VCB = 12 V; IE =ie = 0; f = 1 MHz
2.2
pF
fT
transition frequency
VCE = 12 V; IC = 2 mA; f = 100 MHz 100
MHz
R2
R1
-------
APPLICATION INFORMATION
handbook, halfpage
RBE(ext)
RB(ext)
R2
R1
4
5
6
1
MHC182
3
2
Fig.3 Typical power management circuit.
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