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參數(shù)資料
| 型號： | 934057027118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 274K |
| 代理商： | 934057027118 |
2001 Nov 19
2
Philips Semiconductors
Product specication
PNP switching transistor
PMST2907A
FEATURES
Low current (max. 600 mA)
Low voltage (max. 60 V).
APPLICATIONS
Medium power switching
General purpose amplification.
DESCRIPTION
PNP switching transistor in an SC-70; SOT323 plastic
package. NPN complement: PMST2222A.
MARKING
Note
1.
= - : Made in Hong Kong.
= t : Made in Malaysia.
PINNING
TYPE NUMBER
MARKING CODE(1)
PMST2907A
2F
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1
Simplified outline (SC-70; SOT323) and
symbol.
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
60
V
VCEO
collector-emitter voltage
open base
60
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
600
mA
ICM
peak collector current
800
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
200
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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