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參數(shù)資料
| 型號(hào)： | 934057019118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 12/14頁 |
| 文件大?。?/td> | 301K |
| 代理商： | 934057019118 |
Philips Semiconductors
BUK95/9609-55A
TrenchMOS logic level FET
Product data
Rev. 01 — 21 February 2002
7 of 14
9397 750 09229
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =VGS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C; VDS =25V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
Tj (°C)
VGS(th)
(V)
min
typ
max
03aa36
10-6
10-5
10-4
10-3
10-2
10-1
0123
VGS (V)
ID
(A)
min
typ
max
03nh61
0
25
50
75
100
020
40
60
ID (A)
gfs
(S)
03nh66
0
3000
6000
9000
10-2
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
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