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參數(shù)資料
| 型號： | 934056982118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-5 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 376K |
| 代理商： | 934056982118 |
Philips Semiconductors
BUK91/9907-55ATE
TrenchPLUS logic level FET
Product data
Rev. 01 — 7 February 2002
4 of 17
9397 750 09138
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
VGS ≥ 5V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Continuous drain current as a function of
mounting base temperature.
Tmb =25 °C; IDM single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03na19
0
40
80
120
0
50
100
150
200
Tmb (C)
Pder
(%)
03ne74
0
25
50
75
100
125
150
25
50
75
100
125
150
200
Tmb(
oC)
ID
(A)
Capped at 75 A due to package
P
der
P
tot
P
tot 25 C
°
()
-----------------------
100%
×
=
03nf55
1
10
102
103
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
RDSon = VDS/ID
1 ms
tp = 10 us
100 us
Capped at 75 A due to package
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