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參數(shù)資料
| 型號： | 934056971115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-89, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 934056971115 |
2002 Mar 15
3
Philips Semiconductors
Product specication
PNP resistor-equipped transistor
R1=10k
; R2=47k
PDTA114YEF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. For mounting conditions, see
“Thermal considerations and footprint design for SOT490 in the SC18 Data Handbook”.
THERMAL CHARACTERISTICS
Note
1. For mounting conditions, see
“Thermal considerations and footprint design for SOT490 in the SC18 Data Handbook”.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
10
V
Vi
input voltage
positive
+6
V
negative
40
V
IO
output current (DC)
100
mA
ICM
peak collector current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
in free air; note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = 50 V; IE =0
100
nA
ICEO
collector-emitter cut-off current
VCE = 30 V; IB =0
1
A
VCE = 30 V; IB = 0; Tj = 150 °C
50
A
IEBO
emitter-base cut-off current
VEB = 5 V; IC =0
150
A
hFE
DC current gain
VCE = 5 V; IC = 5 mA
100
VCEsat
saturation voltage
IC = 5 mA; IB = 0.25 mA
100
mV
Vi(off)
input off voltage
VCE = 5 V; IC = 100 A
0.5
V
Vi(on)
input on voltage
VCE = 0.3 V; IC = 1mA
1.4
V
R1
input resistor
7
10
13
k
resistor ratio
3.7
4.7
5.7
Cc
collector capacitance
VCB = 10 V; IE =ie = 0; f = 1 MHz
3pF
R2
R1
-------
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