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參數(shù)資料
| 型號： | 934056948115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 100 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC, UMT6, SOT-363, 6 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 83K |
| 代理商： | 934056948115 |
2002 Sep 10
3
Philips Semiconductors
Product specication
MMIC wideband amplier
BGA2712
THERMAL CHARACTERISTICS
CHARACTERISTICS
VS =5V; IS = 12.3 mA; Tj =25 °C; unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to
solder point
Ptot = 200 mW; Ts ≤ 90 °C
300
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IS
supply current
9
12.3
15
mA
s
21
2
insertion power gain
f = 100 MHz
20
20.8
22
dB
f = 1 GHz
20
21.3
22
dB
f = 1.8 GHz
20
22
23
dB
f = 2.2 GHz
20
22
23
dB
f = 2.6 GHz
19
21.2
22
dB
f = 3 GHz
16
19.3
21
dB
RLIN
return losses input
f = 1 GHz
12
14
dB
f = 2.2 GHz
8
10
dB
RL OUT
return losses output
f = 1 GHz
17
20
dB
f = 2.2 GHz
15
18
dB
s
12
2
isolation
f = 1.6 GHz
31
33
dB
f = 2.2 GHz
36
39
dB
NF
noise gure
f = 1 GHz
3.9
4.3
dB
f = 2.2 GHz
4.3
4.7
dB
BW
bandwidth
at
s
21
2
3 dB below at gain at 1 GHz 2.8
3.2
GHz
K
stability factor
f = 1 GHz
1.5
2
f = 2.2 GHz
2.5
3
PL(sat)
saturated load power
f = 1 GHz
3
4.8
dBm
f = 2.2 GHz
0
1.3
dBm
PL1dB
load power
at 1 dB gain compression; f = 1 GHz
2
0.2
dBm
at 1 dB gain compression; f = 2.2 GHz
4
2
dBm
IP3(in)
input intercept point
f = 1 GHz
12
10
dBm
f = 2.2 GHz
14
16
dBm
IP3(out)
output intercept point
f = 1 GHz
9
11
dBm
f = 2.2 GHz
4
6
dBm
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