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參數(shù)資料
| 型號： | 934056928115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, MIXER DIODE |
| 封裝： | ULTRA SMALL, PLASTIC, SMD, UFP, SC-79, 2 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 934056928115 |
2002 Apr 08
3
Philips Semiconductors
Product specication
Schottky barrier diode
1PS79SB63
ELECTRICAL CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: pulse width = 300
s; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD523 (SC-79) standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
see Fig.2
IF = 0.1 mA
160
200
mV
IF = 1 mA
240
300
mV
IR
continuous reverse current
see Fig.3
VR = 1 V
0.4
1
A
VR = 5 V; note 1
50
A
Cd
diode capacitance
VR = 0 V; f = 1 MHz; see Fig.4
0.35
0.5
pF
Ls
series inductance
0.6
nH
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
note 1
450
K/W
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