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參數(shù)資料
| 型號： | 934056925112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 82K |
| 代理商： | 934056925112 |
2002 Aug 06
3
Philips Semiconductors
Product specication
L-band radar LDMOS transistor
BLL1214-250
THERMAL CHARACTERISTICS
Notes
1. Thermal resistance is determined under RF operating conditions; tp = 100 s, δ = 10%.
2. Thermal resistance is determined under RF operating conditions; tp = 1 ms, δ = 10%.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th =25 °C; Zth mb-h = 0.25 K/W, unless otherwise specied.
Ruggedness in class-AB operation
The BLL1214-250 is capable of withstanding a load mismatch corresponding to VSWR=3:1 through all phases under
the following conditions: VDS = 36 V; frequency from 1200 MHz to 1400 MHz at rated load power.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Zth j-h
thermal impedance from junction to heatsink
Th =25 °C, note 1
0.17
K/W
Zth j-h
thermal impedance from junction to heatsink
Th =25 °C, note 2
0.32
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 3 mA
75
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID = 300 mA
4
5V
IDSS
drain-source leakage current
VGS = 0; VDS =36V
1
A
IDSX
on-state drain current
VGS =VGSth +9V; VDS =10V
45
A
IGSS
gate leakage current
VGS = ±20 V; VDS =0
1
A
gfs
forward transconductance
VDS = 10 V; ID =10A
9
S
RDSon
drain-source on-state resistance
VGS =9V; ID =10A
60
m
MODE OF
OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
pulse
droop
(dB)
tr
(ns)
tf
(ns)
Pulsed class-AB;
tp = 1 ms; δ = 10%
1200 to 1400
36
150
250
>12
>42
<0.6
<100
Typical impedance
FREQUENCY
(GHZ)
ZS
(
)
ZL
(
)
1.20
1.3
j 2.8
1.1
j 0.9
1.25
1.9
j 2.9
1.0
j 0.5
1.30
4.6
j 2.9
0.8
j 0.2
1.35
5.7
j 0.3
0.7
j 0.3
1.40
2.7
j 1.8
0.6
j 0.4
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