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參數(shù)資料
| 型號： | 934056834112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 64K |
| 代理商： | 934056834112 |
2002 Oct 02
2
Philips Semiconductors
Product specication
Avionics LDMOS transistor
BLA1011-2
FEATURES
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators,
reducing common mode inductance.
APPLICATIONS
Avionics applications in the 1030 to 1090 MHz
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flangeless package
(SOT538A) with a ceramic cap. The common source is
connected to the mounting base.
PINNING - SOT538A
PIN
DESCRIPTION
1
drain
2
gate
3
source, connected to mounting base
2
3
1
Top view
MBK905
Fig.1 Simplified outline (SOT538A).
QUICK REFERENCE DATA
RF performance at Th =25 °C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
Pulsed class-AB;
tp =50 s; δ =2%
1030 to 1090
36
2
>16
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
75
V
VGS
gate-source voltage
±15
V
ID
drain current (DC)
2.2
A
Ptot
total power dissipation
Th ≤ 25 °C
10
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
200
°C
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