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參數(shù)資料
| 型號(hào)： | 934056749118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 40 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-5 |
| 文件頁(yè)數(shù)： | 16/16頁(yè) |
| 文件大?。?/td> | 383K |
| 代理商： | 934056749118 |
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Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
Product data
Rev. 03 — 22 January 2002
9 of 16
9397 750 08724
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =VGS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C; VDS =25V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03na17
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
180
max
typ
min
V
GS(th)
T
j
(
o
C)
(V)
03na18
0
0.5
1
1.5
2
2.5
3
max
typ
min
I
D
V
GS
(V)
10-6
10-5
10-4
10-3
10-2
10-1
(A)
03ne81
0
20
40
60
80
100
120
140
0
20406080
100
ID (A)
gfs
(S)
03ne86
0
2000
4000
6000
8000
10000
12000
14000
16000
10-2
10-1
1
10
102
VDS(V)
C (pF)
Ciss
Coss
Crss
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