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參數(shù)資料
| 型號： | 934056699118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 55 A, 55 V, 0.0166 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 289K |
| 代理商： | 934056699118 |
Philips Semiconductors
BUK9215-55A
TrenchMOS logic level FET
Product data
Rev. 01 — 16 August 2001
6 of 12
9397 750 08633
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 20 A; VGS =0V;
-
0.85
1.2
V
trr
reverse recovery time
IS = 20 A; dIS/dt = 100 A/s;
VGS = 10 V; VDS =30V
-51
-
ns
Qr
recovered charge
-
102
-
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °C.
Tj =25 °C; ID =25A.
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C.
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nb61
0
50
100
150
200
250
300
02468
10
VDS (V)
ID
(A)
VGS (V) = 10
2.2
3
4
5
6
7
8
9
03nf85
10
11
12
13
14
15
16
17
18
19
3
6
9
12
15
VGS (V)
RDSon
(m
)
03nb62
10
12
14
16
18
20
22
20
40
60
80
100
ID (A)
RDSon
(m
)
5.0
4.6
4.2
4.0
3.6
VGS (V) = 3.4
03ne89
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (C)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
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