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參數(shù)資料
| 型號： | 934056689127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 920 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT-365C, 3 PIN |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 145K |
| 代理商： | 934056689127 |
2003 Feb 26
5
Philips Semiconductors
Product specication
GSM900 EDGE power module
BGF944
handbook, halfpage
MBL817
0
8
16
32
29.4
27
28.6
24
28.2
27.8
27.4
60
0
10
40
30
20
PL (W)
Gp
(dB)
Gp
η
(%)
η
50
29
Fig.6
CW gain power and efficiency as functions
of load power; typical values.
f = 940 MHz.
handbook, halfpage
MBL818
04
8
28.6
28.2
29
28.8
28.4
29.2
50
30
10
0
20
40
12
26
10
Gp
PL (AV) (W)
η
(%)
(dB)
Fig.7
Two tone gain power and efficiency as
functions of load power; typical values.
f1 = 940 MHz; f2 = 8941 MHz.
handbook, halfpage
MBL819
04
8
20
70
30
12
26
10
40
50
60
d3
d5
d7
PL (AV) (W)
dim
(dBc)
Fig.8
Two tone intermodulation distortion as a
function of average load power; typical
values.
f1 = 940 MHz; f2 = 941 MHz.
handbook, halfpage
800
900
1000
1100
30
20
28
26
24
22
0
30
6
12
18
24
MBL820
s21
(dB)
s11
(dB)
s11
s21
s11
f (MHz)
Fig.9 s-parameters as a function of frequency.
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