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參數(shù)資料
| 型號： | 934056671115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-89, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 42K |
| 代理商： | 934056671115 |
2001 Jun 11
2
Philips Semiconductors
Product specication
PNP resistor-equipped transistor
PDTA124EEF
FEATURES
Built-in bias resistors R1 and R2 (typical 22 k each)
Simplification of circuit design
Reduces number of components and board space.
APPLICATIONS
Especially suitable for space reduction in interface and
driver circuits
Inverter circuit configuration without use of external
resistors.
DESCRIPTION
PNP resistor equipped transistor in an SC-89 (SOT490)
plastic package.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
PDTA124EEF
3R
PIN
DESCRIPTION
1
base/input
2
emitter/ground (+)
3
collector/output
handbook, halfpage
MAM413
1
2
3
R1
R2
12
Top view
3
Fig.1
Simplified outline (SC-89; SOT490)
and symbol.
MGA893 - 1
1
3
2
Fig.2 Equivalent circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
10
V
VI
input voltage
positive
+10
V
negative
40
V
IO
output current (DC)
100
mA
ICM
peak collector current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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