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參數(shù)資料
| 型號(hào)： | 934056662115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMT6, SSOT6, SC-74, TSOP-6 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | 934056662115 |
2001 Oct 22
3
Philips Semiconductors
Product specication
PNP general purpose double transistor
PIMT1
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
208
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
ICBO
collector-base cut-off current
VCB = 30 V; IE =0
100
nA
VCB = 30 V; IE = 0; Tj = 150 °C
10
A
IEBO
emitter-base cut-off current
VEB = 4 V; IC =0
100
nA
hFE
DC current gain
VCE = 6 V; IC = 1 mA
120
VCEsat
collector-emitter saturation
voltage
IC = 50 mA; IB = 5 mA; note 1
200
mV
Cc
collector capacitance
VCB = 12 V; IE =Ie = 0; f = 1 MHz
2.2
pF
fT
transition frequency
VCE = 12 V; IC = 2 mA;
f = 100 MHz
100
MHz
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