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參數(shù)資料
| 型號(hào)： | 934056580115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 射頻混頻器 |
| 英文描述： | SILICON, UHF BAND, MIXER DIODE |
| 封裝： | PLASTIC, SMD, SC-88, 6 PIN |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 110K |
| 代理商： | 934056580115 |
2003 Apr 11
3
Philips Semiconductors
Product specication
Schottky barrier triple diode
1PS88SB82
THERMAL CHARACTERISTICS
Note
1. Refer to SOT363 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
416
K/W
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: pulse width = 300
s; δ = 0.02.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
see note 1 and Fig.2
IF =1mA
340
mV
IF =30mA
700
mV
IR
reverse current
VR = 1 V; see Fig.3; note 1
0.2
A
rD
diode forward resistance
f = 1 kHz; IF = 5 mA; see Fig.5
12
Cd
diode capacitance
VR = 0 V; f = 1 MHz; see Fig.4
1
pF
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