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參數(shù)資料
Philips Semiconductors
BUK98180-100A
TrenchMOS logic level FET
Product data
Rev. 02 — 18 May 2001
7 of 13
9397 750 08277
Philips Electronics N.V. 2001. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =VGS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C; VDS =25V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
Tj (
oC)
VGS(th)
(V)
03aa36
10-6
10-5
10-4
10-3
10-2
10-1
0
0.5
1
1.5
2
2.5
3
VGS (V)
ID
(A)
max
typ
min
03nc28
0
2
4
6
8
10
12
14
16
18
0
5
10
15
ID (A)
gfs
(S)
03nc33
0
200
400
600
800
1000
1200
10-2
10-1
1
10
102
VDS (V)
C (pF)
Ciss
Coss
Crss
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