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參數(shù)資料
| 型號(hào)： | 934056521112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 165K |
| 代理商： | 934056521112 |
2003 Feb 24
2
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF2022-70
FEATURES
Typical W-CDMA performance at a supply voltage of
28 V and IDQ of 1 A:
– Output power = 7.5 W (AV)
– Gain = 12.5 dB
– Efficiency = 20%
– ACPR =
42 dBc at 3.84 MHz
–dim = 36 dBc
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (2000 to 2200 MHz)
Internally matched for ease of use.
APPLICATIONS
RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range.
DESCRIPTION
70 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
PINNING - SOT502A
PIN
DESCRIPTION
1
drain
2
gate
3
source, connected to ange
handbook, halfpage
Top view
MBK394
1
2
3
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th =25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
η
D
(%)
dim
(dBc)
2-tone, class-AB
f1 = 2170; f2 = 2170.1
28
65 (PEP)
>11
>30
≤25
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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