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參數(shù)資料
| 型號： | 934056505115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | 6.9 pF, 10 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | ULTRA SMALL, PLASTIC, SMD, SC-79, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 934056505115 |
2001 Dec 11
2
Philips Semiconductors
Preliminary specication
Low-voltage variable capacitance diode
BB145C
FEATURES
Ultra small plastic SMD package
Very low capacitance spread
High capacitance ratio
C1 to C4 ratio: min. 2.39, max. 2.53.
APPLICATIONS
Voltage Controlled Oscillators (VCO).
DESCRIPTION
The BB145C is a variable capacitance diode, fabricated in
planar technology and encapsulated in the SOD523 ultra
small plastic SMD package.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
BB145C
K3
PIN
DESCRIPTION
1
cathode
2
anode
handbook, 2 columns
12
MBK441
Fig.1 Simplified outline (SOD523) and symbol.
Cathode side indicated by a bar.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
Tj =25 °C unless otherwise specied
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
10
V
VRM
peak reverse voltage
in series with a 10 k
resistor
12
V
IF
continuous forward current
20
mA
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+150
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IR
reverse current
VR = 15 V; see Fig.3
3nA
VR = 15 V; Tj =85 °C
30
nA
rs
diode series resistance
VR = 1 V; f = 470 MHz
0.6
Cd
diode capacitance
VR = 1 V; f = 1 MHz
6.4
7.2
pF
VR = 4 V; f = 1 MHz
2.55
2.85
pF
capacitance ratio
f = 1 MHz
2.39
2.53
C
d1V
()
C
d4V
()
----------------
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