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參數(shù)資料
| 型號： | 934056499112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 4 PIN |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 107K |
| 代理商： | 934056499112 |
2001 Feb 09
3
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF861A
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tj =25 °C; per section; unless otherwise specied.
Note
1. Capacitance values without internal matching.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base
Tmb =25 °C; Ptot = 318 W
0.55
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
0.2
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 1.5 mA
65
V
VGSth
gate-source threshold voltage
VDS =10V; ID = 150 mA
4
5.5
V
IDSS
drain-source leakage current
VGS = 0; VDS =32V
2.2
A
IDSX
drain cut-off current
VGS =VGSth +9V; VDS =10V
18
A
IGSS
gate leakage current
VGS = ±15 V; VDS =0
25
nA
gfs
forward transconductance
VDS =10V; ID =4A
4
S
RDSon
drain-source on-state resistance
VGS =VGSth +9V; ID =4A
160
m
Ciss
input capacitance
VGS = 0; VDS =32V; f=1MHz (1)
82
pF
Coss
output capacitance
VGS = 0; VDS =32V; f=1MHz (1)
40
pF
Crss
feedback capacitance
VGS = 0; VDS =32V; f=1MHz (1)
6
pF
handbook, halfpage
050
100
0
20
40
60
80
10
20
30
40
VDS (V)
Coss
(pF)
MLD510
Fig.2
Output capacitance as a function of
drain-source voltage; typical values per
section.
VGS = 0; f = 1 MHz; Tj =25 °C.
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