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參數(shù)資料
| 型號： | 934056494112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 870 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 934056494112 |
2001 Nov 15
4
Philips Semiconductors
Product specication
860 MHz, 21.5 dB gain power doubler amplier
BGD816L
Notes
1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz.
2. Tilt = 10.2 dB (55 to 745 MHz).
3. Tilt = 7.3 dB (55 to 547 MHz).
4. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 805.25 MHz; Vq = 44 dBmV;
measured at fp +fq = 860.5 MHz.
5. Measured according to DIN45004B:
fp = 851.25 MHz; Vp =Vo;
fq = 858.25 MHz; Vq =Vo 6 dB;
fr = 860.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 849.25 MHz.
6. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V.
CSO
composite second
order distortion
79 chs at; Vo = 44 dBmV; fm = 548.5 MHz
66
dB
112 chs at; Vo = 44 dBmV; fm = 746.5 MHz
58
dB
132 chs at; Vo = 44 dBmV; fm = 860.5 MHz
56
dB
112 chs; fm = 210.0 MHz; Vo = 48.2 dBmV at
745 MHz; note 2
57
dB
79 chs; fm = 210.0 MHz; Vo = 45.3 dBmV at
547 MHz; note 3
64
dB
d2
second order distortion
note 4
70
dB
Vo
output voltage
dim = 60 dB; note 5
62
dBmV
CTB compression = 1 dB; 132 chs at;
f = 859.25 MHz
48
dBmV
CSO compression = 1 dB; 132 chs at;
f = 860.5 MHz
49
dBmV
NF
noise gure
f = 50 MHz
5.5
dB
f = 550 MHz
5.5
dB
f = 750 MHz
6.5
dB
f = 870 MHz
7.5
dB
Itot
total current
consumption (DC)
note 6
345
360
375
mA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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