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參數(shù)資料
| 型號(hào)： | 934056469215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | 70 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 934056469215 |
2001 Oct 12
2
Philips Semiconductors
Product specication
Low-voltage variable capacitance double diode
BB200
FEATURES
Very steep C/V curve
C1: 70 pF; C4.5: 13.4 pF
C1 to C5 ratio: min. 5
Low series resistance
Small plastic SMD package.
APPLICATIONS
Electronic tuning in FM-radio
Voltage Controlled Oscillators (VCO).
DESCRIPTION
The BB200 is a variable capacitance double diode with a
common cathode, fabricated in silicon planar technology
and encapsulated in the SOT23 small plastic SMD
package.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
BB200
SBp
PIN
DESCRIPTION
1
anode (a1)
2
anode (a2)
3
common cathode
handbook, halfpage
2
1
3
MAM169
2
1
3
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
18
V
IF
continuous forward current
50
mA
Tstg
storage temperature range
55
+150
°C
Tj
operating junction temperature
55
+85
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per diode
IR
reverse current
VR =10V
50
nA
rs
diode series resistance
f = 100 MHz; VR = 1.5 V
0.43
0.6
Cd
diode capacitance
VR = 1 V; f = 1 MHz
65.8
70
74.2
pF
VR = 4.5 V; f = 1 MHz
12
13.4
14.8
pF
capacitance ratio
f = 1 MHz
5
C
d1V
()
C
d5V
()
----------------
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