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參數(shù)資料
| 型號： | 934056381118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 12500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 244K |
| 代理商： | 934056381118 |
Philips Semiconductors
Si4420DY
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 28 May 2001
7 of 12
9397 750 08239
Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °C and 150 °C; VDS > ID xRDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
Tj =25 °C and 150 °C; VGS =0V
ID = 12.5 A; VDD =15 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage;
typical values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
03ae59
0
10
20
30
40
50
0
10
2030
4050
ID (A)
gfs
(S)
Tj = 25 C
150 C
VDS > ID x RDSon
03ae61
102
103
10-1
1
10
102
VDS (V)
Ciss,
Coss,
Crss
(pF)
Ciss
Coss
Crss
104
03ae60
0
10
20
30
40
50
0
0.3
0.6
0.9
1.2
VSD (V)
IS
(A)
Tj = 25 C
150 C
VGS = 0 V
03ae62
0
2
4
6
8
10
0
1530456075
QG (nC)
VGS
(V)
ID = 12.5A
Tj = 25 C
VDD = 15 V
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