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參數(shù)資料
| 型號： | 934056333115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, UMT6, SC-88, 6 PIN |
| 文件頁數(shù)： | 17/20頁 |
| 文件大?。?/td> | 158K |
| 代理商： | 934056333115 |
2001 Apr 25
6
Philips Semiconductors
Product specication
Dual N-channel dual gate MOS-FET
BF1203
handbook, halfpage
0
2.5
25
0
5
10
15
20
0.5
1
1.5
2
VG1-S (V)
ID
(mA)
MCD935
VG2-S = 4 V
3.5 V
3 V
2.5 V
2 V
1.5 V
1 V
Fig.3 Transfer characteristics; typical values.
Amplifier a
VDS =5V.
Tj =25 °C.
handbook, halfpage
010
24
0
8
16
2
VDS (V)
ID
(mA)
6
48
MCD936
VG1-S = 1.8 V
1.7 V
1.5 V
1.6 V
1.4 V
1.3 V
1.2 V
Fig.4 Output characteristics; typical values.
Amplifier a
VG2-S =4V.
Tj =25 °C.
handbook, halfpage
0
2.5
100
0
20
40
60
80
0.5
1
1.5
2
VG1-S (V)
IG1
(
A)
MCD937
VG2-S = 4 V
3.5 V
3 V
2.5 V
2 V
1.5 V
Fig.5
Gate 1 current as a function of gate 1
voltage; typical values.
Amplifier a
VDS =5V.
Tj =25 °C.
handbook, halfpage
0
ID (mA)
525
40
30
10
0
20
10
15
20
MCD938
yfs
(mS)
3.5 V
2.5 V
3 V
2 V
VG2-S = 4 V
Fig.6
Forward transfer admittance as a function
of drain current; typical values.
Amplifier a
VDS =5V.
Tj =25 °C.
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