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參數(shù)資料
| 型號： | 934056304115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 齊納二極管 |
| 英文描述： | 5.1 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | PLASTIC, UMT3, SC-70, CMPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 57K |
| 代理商： | 934056304115 |
2001 Feb 27
2
Philips Semiconductors
Product specication
Voltage regulator double diodes
BZB784 series
FEATURES
Total power dissipation: max. 350 mW
Approx. 5% VZ tolerance
Working voltage range: nom. 2.4 to 15 V (E24 range).
APPLICATIONS
General regulation functions
ESD and surge protection.
DESCRIPTION
Low-power voltage regulator diodes in a small SOT323
(SC-70) package.
PINNING SOT323 (SC-70)
PIN
DESCRIPTION
1
cathode
2
cathode
3
common anode
handbook, halfpage
Top view
2
1
3
MAM407
2
1
3
Fig.1 Simplified outline and symbol.
MARKING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZB784-C2V4
91
BZB784-C3V9
96
BZB784-C6V2
9B
BZB784-C10
9G
BZB784-C2V7
92
BZB784-C4V3
97
BZB784-C6V8
9C
BZB784-C11
9H
BZB784-C3V0
93
BZB784-C4V7
98
BZB784-C7V5
9D
BZB784-C12
9J
BZB784-C3V3
94
BZB784-C5V1
99
BZB784-C8V2
9E
BZB784-C13
9K
BZB784-C3V6
95
BZB784-C5V6
9A
BZB784-C9V1
9F
BZB784-C15
9L
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IF
continuous forward current
200
mA
IZSM
non-repetitive peak reverse current
tp = 100 s; square wave;
Tamb =25 °C; prior to surge
see Table 1
Ptot
total power dissipation; note 1
Tamb =25 °C; 2 diodes loaded
350
mW
Tamb =25 °C; 1 diode loaded
180
mW
PZSM
non-repetitive peak reverse
dissipation
tp = 100 s; square wave;
Tamb =25 °C; prior to surge
40
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
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