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參數(shù)資料
| 型號： | 934056244118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 38 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數(shù)： | 10/13頁 |
| 文件大小： | 277K |
| 代理商： | 934056244118 |
Philips Semiconductors
BUK7230-55A
TrenchMOS standard level FET
Product specication
Rev. 01 — 29 September 2000
6 of 13
9397 750 07568
Philips Electronics N.V. 2000. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 25 A; VGS =0V;
Figure 15
0.85
1.2
V
trr
reverse recovery time
IS = 25 A;dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
40
ns
Qr
recovered charge
100
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °CTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
On-state resistance: typical values.
Tj =25°C;
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain source on-state resistance
factor as a function of junction temperature.
03na46
0
20
40
60
80
100
120
140
160
02
46
8
10
VDS(V)
ID
(A)
4.5
6
8
7
10
12
16
9
VGS = 20 (V)
03na44
10
15
20
25
30
35
40
45
50
55
510
15
20
VGS (V)
RDSon
(mOhm)
03na47
20
25
30
35
40
45
50
55
60
65
70
0
10203040
5060708090
ID (A)
VGS(V) = 6
10
9
8
7
6.5
RDSon
(mOhm)
03aa28
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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