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參數(shù)資料
| 型號(hào)： | 934056240118 |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 55 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 10/13頁(yè) |
| 文件大?。?/td> | 283K |
| 代理商： | 934056240118 |
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Philips Semiconductors
BUK9219-55A
TrenchMOS logic level FET
Product specication
Rev. 01 — 24 October 2000
6 of 13
9397 750 07642
Philips Electronics N.V. 2000. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 25 A; VGS =0V; Figure 15
0.85
1.2
V
trr
reverse recovery time
IS = 20 A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
51
ns
Qr
recovered charge
102
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °CTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
On-state resistance: typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain source on-state resistance
factor as a function of junction temperature.
03nb61
0
50
100
150
200
250
300
02
46
8
10
VDS (V)
ID
(A)
2.2
3
4
5
6
7
9
10
8
VGS (V) =
03nb60
10
15
20
25
30
35
24
68
10
VGS (V)
RDSON
(m
)
03nb62
10
12
14
16
18
20
22
20
30
40
50
60
70
80
90
100
ID (A)
5.0
4.6
4.2
4.0
3.6
3.4
VGS (V) =
RDSon
(m
)
03aa28
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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