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參數(shù)資料
| 型號(hào)： | 934056122135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 3 PIN |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大?。?/td> | 334K |
| 代理商： | 934056122135 |
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Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 11 September 2000
2 of 13
9397 750 07342
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
100
V
ID
drain current (DC)
Tsp =25 °C; VGS =5V
3.5
A
Ptot
total power dissipation
Tsp =25 °C
6.9
W
Tj
junction temperature
150
°C
RDSon
drain-source on-state resistance
VGS =5V; ID = 1.75 A
200
250
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
100
V
VDGR
drain-gate voltage (DC)
Tj =25to150 °C; RGS =20k
100
V
VGS
gate-source voltage (DC)
±16
V
ID
drain current (DC)
3.5
A
Tsp = 100 °C; VGS =5V;
2.2
A
IDM
peak drain current
14
A
Ptot
total power dissipation
6.9
W
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
65
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tsp =25 °C
3.5
A
ISM
peak source (diode forward) current Tsp =25 °C; tp ≤ 10 s
14
A
Avalanche ruggedness
EAS
non-repetitive avalanche energy
unclamped inductive load; ID = 3.5 A;
tp = 0.2 ms; VDD ≤ 15 V; RGS =50 ;
45
mJ
IAS
non-repetitive avalanche current
unclamped inductive load; VDD ≤ 15 V;
3.5
A
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