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參數(shù)資料
| 型號： | 934055972127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 41K |
| 代理商： | 934055972127 |
Philips Semiconductors
Product specification
Rectifier diode
BYC10-600CT
ultrafast, low switching loss
FEATURES
SYMBOL
QUICK REFERENCE DATA
Dual diode
V
R = 600 V
Extremely fast switching
Low reverse recovery current
V
F ≤ 1.75 V
Low thermal resistance
Reduces switching losses in
I
O(AV) = 10 A
associated MOSFET
t
rr = 19 ns (typ)
APPLICATIONS
PINNING
SOT78 (TO220AB)
Active power factor correction
PIN
DESCRIPTION
Half-bridge lighting ballasts
Half-bridge/ full-bridge switched
1
anode 1
mode power supplies.
2
cathode
The BYC10-600CT is supplied in
the SOT78 (TO220AB)
3
anode 2
conventional leaded package.
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
Peak repetitive reverse voltage
-
600
V
RWM
Crest working reverse voltage
-
600
V
R
Continuous reverse voltage
T
mb ≤ 110 C
-
500
V
I
O(AV)
Average output current (both
δ = 0.5; with reapplied V
RRM(max);
-
10
A
diodes conducting)
T
mb ≤ 50 C
1
I
FRM
Repetitive peak forward current
δ = 0.5; with reapplied V
RRM(max);
-
10
A
per diode
T
mb ≤ 50 C
1
I
FSM
Non-repetitive peak forward
t = 10 ms
-
40
A
current per diode
t = 8.3 ms
-
44
A
sinusoidal; T
j = 150C prior to surge
with reapplied V
RWM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
per diode
-
2.5
K/W
mounting base
both diodes
-
2.2
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
60
-
K/W
ambient
k
a1
a2
13
2
12 3
tab
1 T
mb(max) limited by thermal runaway
March 2001
1
Rev 1.200
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