參數(shù)資料
型號: 934055953112
廠商: NXP SEMICONDUCTORS
元件分類: 整流器
英文描述: 3.7 A, 600 V, SILICON, RECTIFIER DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 2/8頁
文件大小: 54K
代理商: 934055953112
1996 Jun 07
2
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYW95 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack
Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD64 package,
using a high temperature alloyed
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
,
,
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYW95A
200
V
BYW95B
400
V
BYW95C
600
V
VR
continuous reverse voltage
BYW95A
200
V
BYW95B
400
V
BYW95C
600
V
IF(AV)
average forward current
Ttp =60 °C; lead length = 10 mm
see Fig.2;
averaged over any 20 ms period;
see also Fig.6
3.00
A
Tamb =65 °C; PCB mounting (see
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
1.25
A
IFRM
repetitive peak forward current
Ttp =60 °C; see Fig.4
30
A
Tamb =65 °C; see Fig.5
13
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
70
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
10
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Fig.7
65
+175
°C
相關(guān)PDF資料
PDF描述
934032150112 3.7 A, 600 V, SILICON, RECTIFIER DIODE
933621590112 3.7 A, 600 V, SILICON, RECTIFIER DIODE
934055417112 3.7 A, 200 V, SILICON, RECTIFIER DIODE
933500070133 3.7 A, 200 V, SILICON, RECTIFIER DIODE
933500150113 3.7 A, 600 V, SILICON, RECTIFIER DIODE
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