參數(shù)資料
型號(hào)： 934055797127
廠(chǎng)商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： 13 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, FPAK-3
文件頁(yè)數(shù)： 5/8頁(yè)
文件大?。?/td> 61K
代理商： 934055797127
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX23NQ10T
Fig.7. Typical transfer characteristics.
I
D = f(VGS)
Fig.8. Typical transconductance, T
j = 25 C.
g
fs = f(ID)
Fig.9. Normalised drain-source on-state resistance.
R
DS(ON)/RDS(ON)25 C = f(Tj)
Fig.10. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.11. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C; VDS = VGS
Fig.12. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
0
10
20
30
40
50
02
46
8
10
VGS / V
ID / A
Tj / C = 25
150
Threshold Voltage, VGS(TO) (V)
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-60 -40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature, Tj (C)
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Drain current, ID / (A)
Transconductance, gfs (S)
150 C
Tj = 25 C
Drain current, ID (A)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Gate-source voltage, VGS (V)
minimum
typical
maximum
Normalised On-state Resistance.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-60 -40 -20
0
20
40
60
80 100 120 140 160
Junction temperature , Tj (C)
10
100
1000
10000
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
September 1999
5
Rev 1.000
相關(guān)PDF資料
PDF描述
934055803118 47 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
05WS22 Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:18-30
934055804127 47 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
934055802118 47 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
934055805127 47 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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