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參數(shù)資料
| 型號： | 934055784115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMT6, SSOT6, SC-74, TSOP-6 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 66K |
| 代理商： | 934055784115 |
1999 Dec 15
5
Philips Semiconductors
Product specication
NPN switching double transistor
PMBT3904D
handbook, halfpage
0
500
100
200
300
400
MCD785
101
1
(1)
(2)
(3)
hFE
10
IC (mA)
102
103
Fig.3
DC current gain as a function of collector
current; typical values.
VCE =1V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
0
0.5
0.1
0.2
0.3
0.4
MCD788
101
1
(1)
VCEsat
(V)
10
IC (mA)
102
103
(3)
(2)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
0
1
0.2
0.4
0.6
0.8
MCD786
101
1
(1)
(2)
(3)
VBE
(V)
10
IC (mA)
102
103
Fig.5
Base-emitter voltage as a function of
collector current; typical values.
VCE =1V.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
010
100
0
20
40
60
80
2
(2)
(4)
(5)
(8)
(9)
(10)
(1)
VCE (V)
IC
(mA)
46
8
MCD787
(3)
(6)
(7)
Fig.6
Collector current as a function of
collector-emitter voltage; typical values.
(1) IB = 500 A.
(2) IB = 450 A.
(3) IB = 400 A.
(4) IB = 350 A.
(5) IB = 300 A.
(6) IB = 250 A.
(7) IB = 200 A.
(8) IB = 150 A.
(9) IB = 100 A.
(10) IB =50 A.
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