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| 型號(hào)： | 934055783115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.12 A, SILICON, SIGNAL DIODE |
| 封裝： | CERAMIC, SMD, 2 PIN |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | 934055783115 |
2001 Feb 05
4
Philips Semiconductors
Product specication
Schottky barrier diode
BAS240
handbook, halfpage
10 2
10
1
10 2
0
MLC361 - 1
0.6
0.8
0.4
0.2
1.0
V (V)
10 1
I F
(mA)
F
(1)
(2)
(3)
(4)
Fig.2
Forward current as a function of forward
voltage; typical values.
(1) Tamb = 150 °C.
(2) Tamb =85 °C.
(3) Tamb =25 °C.
(4) Tamb = 40 °C.
handbook, halfpage
103
102
101
102
10
1
0
MLC362
20
10
40
30
VR (V)
IR
(
A)
(1)
(2)
(3)
Fig.3
Reverse current as a function of reverse
voltage; typical values.
(1) Tamb = 150 °C.
(2) Tamb =85 °C.
(3) Tamb =25 °C.
handbook, halfpage
MLC364
110
10
2
1
10 3
10
102
10 1
r diff
(
)
I (mA)
F
Fig.4
Differential forward resistance as a function
of forward current; typical values.
f = 10 kHz.
handbook, halfpage
010
20
40
30
5
0
4
MLC363
3
2
1
VR (V)
Cd
(pF)
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb =25 °C.
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