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參數(shù)資料
| 型號： | 934055781127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 86K |
| 代理商： | 934055781127 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PSMN040-200W
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction
-
0.5
K/W
to mounting base
R
th j-a
Thermal resistance junction
in free air
45
-
K/W
to ambient
ELECTRICAL CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
200
-
V
voltage
T
j = -55C
178
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
2.0
3.0
4.0
V
T
j = 175C
1.0
-
V
T
j = -55C
-
6
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 25 A
-
35
40
m
resistance
T
j = 175C
-
116
m
I
GSS
Gate source leakage current V
GS = ±10 V; VDS = 0 V
-
2
100
nA
I
DSS
Zero gate voltage drain
V
DS = 200 V; VGS = 0 V;
-
0.05
10
A
current
T
j = 175C
-
500
A
Q
g(tot)
Total gate charge
I
D = 50 A; VDD = 160 V; VGS = 10 V
-
183
-
nC
Q
gs
Gate-source charge
-
40
-
nC
Q
gd
Gate-drain (Miller) charge
-
73
-
nC
t
d on
Turn-on delay time
V
DD = 100 V; RD = 3.9 ;
-
43
-
ns
t
r
Turn-on rise time
V
GS = 10 V; RG = 5.6
-94
-
ns
t
d off
Turn-off delay time
Resistive load
-
230
-
ns
t
f
Turn-off fall time
-
92
-
ns
L
d
Internal drain inductance
Measured from tab to centre of die
-
3.5
-
nH
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
9530
-
pF
C
oss
Output capacitance
-
732
-
pF
C
rss
Feedback capacitance
-
380
-
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
S
Continuous source current
-
50
A
(body diode)
I
SM
Pulsed source current (body
-
200
A
diode)
V
SD
Diode forward voltage
I
F = 25 A; VGS = 0 V
-
0.85
1.2
V
t
rr
Reverse recovery time
I
F = 20 A; -dIF/dt = 100 A/s;
-
160
-
ns
Q
rr
Reverse recovery charge
V
GS = 0 V; VR = 30 V
-
1.4
-
C
August 1999
2
Rev 1.000
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