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| 型號(hào)： | 934055759127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 8/14頁(yè) |
| 文件大?。?/td> | 277K |
| 代理商： | 934055759127 |
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Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 02 — 12 March 2001
3 of 14
9397 750 08037
Philips Electronics N.V. 2001. All rights reserved.
VGS ≥ 10 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
Tmb =25 °C; IDM is single pulse.
Unclamped inductive load; VDD ≤ 25 V; RGS =50 ;
VGS = 10 V; starting Tj =25 °C and 150 °C.
Fig 3.
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage.
Fig 4.
Non-repetitive avalanche ruggedness current
as a function of pulse duration.
03aa16
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
200
P
der
T
mb
(
o
C)
(%)
03aa24
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
200
I
der
(%)
T
mb
(
o
C)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
RDSon = VDS/ ID
D.C.
tp = 10 s
100
s
1 ms
10 ms
100 ms
VDS (V)
103
102
10
1
10
1
10-1
10
2
ID
(A)
10
3
003aaa055
10
2
10
1
10
-1
110
10
-1
10
-2
10
-3
Tj prior to avalanche = 150
o
C
25
o
C
tp (ms)
IAS
(A)
003aaa054
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