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參數(shù)資料
| 型號(hào)： | 934055690115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.5 A, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMD, UMT3, SC-70, CMPAK-3 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 55K |
| 代理商： | 934055690115 |
2001 Mar 16
3
Philips Semiconductors
Product specication
Schottky barrier diode
1PS70SB20
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. Pulse test: tp = 300 s; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
IF = 500 mA; see Fig.2
550
mV
IR
reverse current
VR = 35 V; see Fig.3
100
A
VR = 35 V; Tj = 100 °C; see Fig.3;
note 1
10
mA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.4
60
90
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
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