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參數(shù)資料
| 型號： | 934055524127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 35K |
| 代理商： | 934055524127 |
Philips Semiconductors
Product specification
Rectifier diodes
PBYR10100X series
Schottky barrier
Fig.1. Maximum forward dissipation P
F = f(IF(AV));
square current waveform where I
F(AV) =IF(RMS) x √D.
Fig.2. Maximum forward dissipation P
F = f(IF(AV));
sinusoidal current waveform where a = form
factor = I
F(RMS) / IF(AV).
Fig.3. Typical and maximum forward characteristic
I
F = f(VF); parameter Tj
Fig.4. Typical reverse leakage current; I
R = f(VR);
parameter T
j
Fig.5. Typical junction capacitance; C
d = f(VR);
f = 1 MHz; T
j = 25C to 125 C.
Fig.6. Transient thermal impedance; Z
th j-mb = f(tp).
0
1
2
3
4
5
6
7
8
9
10
0123456789
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Ths(max) (C)
150
a = 1.57
1.9
2.2
2.8
142
134
126
118
110
4
0
50
100
10
1
0.1
0.01
IR / mA
VR/ V
PBYR10100
75 C
100 C
125 C
150 C
Tj = 50 C
0
2
4
6
8
10
12
02468
10
12
14
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Ths(max) (C)
150
D = 1.0
0.5
0.2
0.1
142
134
126
118
110
T
tp
D = tp/T
102
1
10
100
10000
1000
100
10
Cd/ pF
VR/ V
PBYR20100CT
012
VF / V
IF / A
50
40
30
20
10
0
0.5
1.5
Tj = 25 C
Tj = 125 C
Typ
Max
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
PBYR10100
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
tp
T
P
t
D
November 1999
3
Rev 1.000
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