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參數(shù)資料
| 型號： | 934055350118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 37 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 115K |
| 代理商： | 934055350118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
PHP37N06LT, PHB37N06LT, PHD37N06LT
Logic level FET
Fig.3. Safe operating area. T
mb = 25 C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
Fig.7. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.8. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 25 V
1
10
100
1
10
100
1000
tp =
1 us
10us
100 us
1 ms
10ms
100ms
ID/A
VDS/V
RDS(ON) = VDS/ID
DC
0
1020
3040
5060
25
30
35
40
45
RDS(ON)/mOhm
VGS/V =
ID/A
4
4.2
4.4
4.6
4.8
5
1.0E-06
0.0001
0.01
1
100
0.01
0.1
1
10
ZTH/ (K/W)
t/s
0.5
0.2
0.1
0.05
0.02
0
D =
tp
T
P
t
D
0
1
2
345
67
0
10
20
30
40
50
60
70
ID/A
VGS/V
Tj/C =
175
25
0246
8
10
0
20
40
60
80
100
10
7
VGS = 6.0 V
5.6
5.0
4.6
4.0
3.6
3.0
Drain current, ID (A)
Drain-source voltage, VDS (V)
0
1020
3040
506070
5
10
15
20
25
30
Transconductance, gfs (S)
Drain current, ID (A)
September 1998
4
Rev 1.400
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