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參數(shù)資料
| 型號(hào)： | 934054924115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.07 A, SILICON, SIGNAL DIODE |
| 封裝： | ULTRA SMALL, PLASTIC, SMD, UFP, SC-79, 2 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | 934054924115 |
1998 Jul 16
2
Philips Semiconductors
Product specication
Schottky barrier diode
1PS79SB70
FEATURES
Low forward voltage
High breakdown voltage
Guard ring protected
Ultra small plastic SMD package
Low capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD
package.
Fig.1 Simplified outline (SC-79) and symbol.
Marking code: G.
handbook, halfpage
ka
Top view
MAM403
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
70
V
IF
continuous forward current
70
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
70
mA
IFSM
non-repetitive peak forward current
tp < 10 ms
100
mA
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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