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參數(shù)資料
| 型號(hào)： | 934054921125 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 1 A, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMD, SMT6, SSOT6, SC-74, TSOP-6 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 934054921125 |
2001 Aug 27
2
Philips Semiconductors
Product specication
Schottky barrier diode
1PS74SB23
FEATURES
Ultra fast switching speed
Low forward voltage
Fast recovery time
Guard ring protected
Small plastic SMD package
Capability of absorbing very high
surge current.
APPLICATIONS
Rectification
Circuit protection
Polarity protection
Switched-mode power supplies.
DESCRIPTION
Planar Schottky barrier diode
encapsulated in an SC-74 (SOT457)
small plastic SMD package.
PINNING
PIN
DESCRIPTION
1
anode
2
cathode
3
anode
4
anode
5
cathode
6
anode
Fig.1 Simplified outline SC-74 (SOT457) and symbol.
Marking code: P1.
handbook, halfpage
MAM421
Top view
1, 3,
4, 6
2, 5
13
2
4
5
6
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Pins 1, 3, 4 and 6 are connected in parallel; pins 2 and 5 are connected in parallel.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
25
V
IF
continuous forward current
1A
IFSM
non-repetitive peak forward current
tp = 8.3 ms; half sinewave;
JEDEC method; note 1
25
A
IRSM
non-repetitive peak reverse current
tp = 100 s
0.5
A
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
125
°C
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