參數(shù)資料
型號: 934053250115
廠商: NXP SEMICONDUCTORS
元件分類: 變?nèi)荻O管
英文描述: UHF BAND, 19.11 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE
封裝: ULTRA SMALL, PLASTIC, SMD, SC-79, 2 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 48K
代理商: 934053250115
1997 Nov 13
2
Philips Semiconductors
Product specication
UHF variable capacitance diode
BB179B
FEATURES
Excellent linearity
Excellent matching to 2% DMA
Ultra small plastic SMD package
C28: 2.1 pF; ratio: 9
Low series resistance.
APPLICATIONS
Electronic tuning in UHF television
tuners
Voltage controlled oscillators
(VCO).
DESCRIPTION
The BB179B is a planar technology
variable capacitance diode, in a
SOD523 (SC-79) package. The
excellent matching performance is
achieved by gliding matching and a
direct matching assembly procedure.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Fig.1 Simplified outline
(SOD523; SC-79) and symbol.
handbook, 2 columns
12
MBK441
C
Marking code: C.
Orientation of marking code as shown.
Cathode side indicated by a bar.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
32
V
VRM
peak reverse voltage
in series with a 10 k
resistor
35
V
IF
continuous forward current
20
mA
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+125
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IR
reverse current
VR = 30 V; see Fig.3
10
nA
VR = 30 V; Tj =85 °C; see Fig.3
200
nA
rs
diode series resistance
f = 470 MHz;
VR is the value at which Cd =9pF
0.6
0.75
Cd
diode capacitance
VR = 1 V; f = 1 MHz; see Figs 2 and 4
18.22
20
pF
VR = 28 V; f = 1 MHz; see Figs 2 and 4 1.9
2.25
pF
capacitance ratio
f = 1 MHz
1.27
capacitance ratio
f = 1 MHz
8.45
10
capacitance ratio
f = 1 MHz
1.05
capacitance matching
VR = 1 to 28 V; in a sequence of 15
diodes (gliding)
2%
C
d1V
()
C
d2V
()
------------------
C
d1V
()
C
d28V
()
--------------------
C
d25V
()
C
d28V
()
--------------------
C
d
C
d
----------
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934053250135 UHF BAND, 19.11 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE
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