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參數(shù)資料
| 型號(hào)： | 934051400115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 1 A, 60 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 52K |
| 代理商： | 934051400115 |
1999 Sep 20
3
Philips Semiconductors
Product specication
Schottky barrier double diodes
BAT160 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp = 300 s; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT223 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
60
V
IF
continuous forward current
1A
IFSM
non-repetitive peak forward current
tp = 8.3 ms; half sinewave;
JEDEC method
10
A
IRSM
non-repetitive peak reverse current
tp = 100 s
0.5
A
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.5
IF = 100 mA
400
mV
IF = 1 A
650
mV
IF = 2 A
850
mV
IR
reverse current
VR = 60 V; note 1; see Fig.6
350
A
VR = 60 V; Tj = 100 °C; note 1;
see Fig.6
8mA
Cd
diode capacitance
f = 1 MHz; VR = 4 V; see Fig 7
60
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
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