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參數(shù)資料
| 型號： | 934051270115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | UHF BAND, 19.74 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | PLASTIC, SMD, UMD2, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 53K |
| 代理商： | 934051270115 |
1997 Dec 17
2
Philips Semiconductors
Product specication
UHF variable capacitance diode
BB149A
FEATURES
Excellent linearity
Excellent matching to 2% DMA
Very small plastic SMD package
C28: 2.1 pF; ratio 9
Low series resistance.
APPLICATIONS
Electronic tuning in UHF television
tuners
Voltage controlled oscillators
(VCO).
DESCRIPTION
The BB149A is a planar technology
variable capacitance diode, in a
SOD323 very small plastic SMD
package. The excellent matching
performance is achieved by gliding
matching and a direct matching
assembly procedure.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Fig.1 Simplified outline
(SOD323) and symbol.
Marking code: PL.
Cathode side indicated by a bar.
handbook, 2 columns
12
MAM392
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
30
V
VRp
peak reverse voltage
in series with a 10 k
resistor
35
V
IF
continuous forward current
20
mA
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+125
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IR
reverse current
VR = 30 V; see Fig.3
10
nA
VR = 30 V; Tj =85 °C; see Fig.3
200
nA
rs
diode series resistance
f = 470 MHz; VR is the value at which Cd =9pF
0.6
0.75
Cd
diode capacitance
VR = 1 V; f = 1 MHz; see Figs 2 and 4
18.22
21.26
pF
VR = 28 V; f = 1 MHz; see Figs 2 and 4
1.951
2.225
pF
capacitance ratio
f = 1 MHz
1.27
capacitance ratio
f = 1 MHz
8.45
10.9
capacitance ratio
f = 1 MHz
1.05
capacitance matching
VR = 1 to 28 V; in a sequence of 15 diodes
(gliding)
2%
C
d1V
()
C
d2V
()
------------------
C
d1V
()
C
d28V
()
--------------------
C
d25V
()
C
d28V
()
--------------------
C
d
C
d
----------
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