參數(shù)資料
型號(hào): 934045260118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 45 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SMD, D2PAK-3
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 68K
代理商: 934045260118
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK7624-55
Standard level FET
STATIC CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
55
-
V
voltage
T
j = -55C
50
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
2.0
3.0
4.0
V
T
j = 175C
1.0
-
V
T
j = -55C
-
4.4
I
DSS
Zero gate voltage drain current
V
DS = 55 V; VGS = 0 V;
-
0.05
10
A
T
j = 175C
-
500
A
I
GSS
Gate source leakage current
V
GS = ±10 V; VDS = 0 V
-
0.02
1
A
T
j = 175C
-
20
A
±V
(BR)GSS
Gate source breakdown voltage I
G = ±1 mA;
16
-
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 25 A
-
19
24
m
resistance
T
j = 175C
-
50
m
DYNAMIC CHARACTERISTICS
T
mb = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fs
Forward transconductance
V
DS = 25 V; ID = 25 A
4
11
-
S
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
1100
1500
pF
C
oss
Output capacitance
-
280
340
pF
C
rss
Feedback capacitance
-
130
180
pF
t
d on
Turn-on delay time
V
DD = 30 V; ID = 25 A;
-
12
18
ns
t
r
Turn-on rise time
V
GS = 10 V; RG = 10
-
1935ns
t
d off
Turn-off delay time
Resistive load
-
25
35
ns
t
f
Turn-off fall time
-
18
25
ns
L
d
Internal drain inductance
Measured from upper edge of drain
-
2.5
-
nH
tab to centre of die
L
s
Internal source inductance
Measured from source lead
-
7.5
-
nH
soldering point to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
45
A
current
I
DRM
Pulsed reverse drain current
-
160
A
V
SD
Diode forward voltage
I
F = 25 A; VGS = 0 V
-
0.95
1.2
V
I
F = 40 A; VGS = 0 V
-
1.0
-
t
rr
Reverse recovery time
I
F = 40 A; -dIF/dt = 100 A/s;
-
40
-
ns
Q
rr
Reverse recovery charge
V
GS = -10 V; VR = 30 V
-
0.07
-
C
April 1998
2
Rev 1.000
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