- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄50444 > 934041830113 (NXP SEMICONDUCTORS) 4.2 A, 100 V, SILICON, RECTIFIER DIODE PDF資料下載
參數(shù)資料
| 型號(hào)： | 934041830113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 4.2 A, 100 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 52K |
| 代理商： | 934041830113 |
1996 Oct 07
2
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectier
BYV4100
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack
Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD64 package, using
a high temperature alloyed
construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
,
,
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
100
V
VR
continuous reverse voltage
100
V
IF(AV)
average forward current
Ttp =65 °C; lead length = 10 mm;
averaged over any 20 ms period;
see Fig.2; see also Fig.4
4.0
A
Tamb =60 °C; PCB mounting
(see Fig.12); averaged over any
20 ms period; see Fig.3; see
also Fig.4
1.9
A
IFRM
repetitive peak forward current
Ttp =65 °C; see Fig.6
34
A
Tamb =60 °C; see Fig.7
17
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
90
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
20
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
65
+175
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 934042230115 | VHF-UHF BAND, 38.5 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 934042230135 | VHF-UHF BAND, 38.5 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 934042240135 | UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 934042240115 | UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 934042250115 | VHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 934042230115 | 制造商:NXP Semiconductors 功能描述:Diode VAR Cap Single 32V 34.65pF 2-Pin SOD-323 T/R |
| 934042380127 | 制造商:NXP Semiconductors 功能描述:SUB ONLY TRANSISTOR |
| 934043060215 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN UHF 50MA SOT23 |
| 934043070215 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN UHF 100MA SOT23 |
| 934043090115 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR SOT-323 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 10V 0.1A 3-Pin SC-70 T/R |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。